Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription: Trans MOSFET N-CH 25V 7.3A 8Pin SOIC N T/R96355+$2.147925+$1.988850+$1.8774100+$1.8297500+$1.79782500+$1.75815000+$1.742110000+$1.7183 -
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Category: transistorDescription: NChannel 30-V (D-S) MOSFET power MOSFET106710+$1.069250+$1.0138100+$0.9742300+$0.9504500+$0.92661000+$0.90292500+$0.86725000+$0.8593 -
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Category: transistorDescription: MOSFET 2P-CH 20V SC89-6991010+$1.236650+$1.1725100+$1.1267300+$1.0992500+$1.07171000+$1.04422500+$1.00305000+$0.9939 -
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Category: transistorDescription: Dual Field Effect Transistor, MOSFET, Dual N-channel, 40 A, 25 V, 0.0035 ohm, 10 V, 2 V812810+$8.2752100+$7.8614500+$7.58561000+$7.57182000+$7.51665000+$7.44777500+$7.392510000+$7.3649 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) HV8 2.1GHZ 48W NI1230HS96281+$428.413010+$417.237050+$408.6687100+$405.6884200+$403.4532500+$400.47301000+$398.61032000+$396.7476 -
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Category: transistorDescription: W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 34W Avg., 28V7487 -
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Category: transistorDescription: W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V64931+$432.416110+$421.135750+$412.4874100+$409.4792200+$407.2232500+$404.21511000+$402.33502000+$400.4549 -
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Category: transistorDescription: Dual field-effect transistor, MOSFET, trench type, dual N-channel, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V446320+$0.314650+$0.2913100+$0.2796300+$0.2703500+$0.26331000+$0.25865000+$0.254010000+$0.2493 -
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Category: transistorDescription: Trans RF MOSFET N-CH 65V 32A 3Pin SOT-502B T/R16541+$730.676210+$705.038450+$701.8337100+$698.6290150+$693.5014250+$689.0148500+$684.52821000+$679.4006 -
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Category: transistorDescription: VESM PNP 50V 100mA811220+$0.529250+$0.4900100+$0.4704300+$0.4547500+$0.44301000+$0.43515000+$0.427310000+$0.4194 -
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Category: transistorDescription: Digital transistor RN1302 (TE85L, F) SC-70968110+$1.323050+$1.2544100+$1.2054300+$1.1760500+$1.14661000+$1.11722500+$1.07315000+$1.0633 -
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Category: transistorDescription: RN1405 Application of resistive NPN transistor 50V 100mA/0.1A 22k 47k SOT-23/SC-59/S-Mini marking/marking XE switch inverter circuit interface circuit and driver circuit262220+$0.087850+$0.0813100+$0.0780300+$0.0754500+$0.07351000+$0.07225000+$0.070910000+$0.0696 -
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Category: transistorDescription: S-Mini NPN 50V 100mA409620+$0.342950+$0.3175100+$0.3048300+$0.2946500+$0.28701000+$0.28195000+$0.276910000+$0.2718 -
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Category: transistorDescription: RN1401 Application of resistive NPN transistor 50V 100mA/0.1A 4.7k 4.7k SOT-23/SC-59/S-Mini marking/marking XA switch inverter circuit interface circuit and driver circuit842020+$0.108050+$0.1000100+$0.0960300+$0.0928500+$0.09041000+$0.08885000+$0.087210000+$0.0856 -
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Category: transistorDescription: VESM NPN 50V 100mA129820+$0.529250+$0.4900100+$0.4704300+$0.4547500+$0.44301000+$0.43515000+$0.427310000+$0.4194 -
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Category: transistorDescription: Trans Digital BJT NPN 50V 0.1A 3Pin VESM Embossed T/R107820+$0.274150+$0.2538100+$0.2436300+$0.2355500+$0.22941000+$0.22535000+$0.221310000+$0.2172 -
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Category: transistorDescription: TSMT N-CH 30V 3.5A84675+$25.073150+$24.0016200+$23.4016500+$23.25161000+$23.10152500+$22.93015000+$22.82307500+$22.7158 -
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Category: transistorDescription: High Power RF LDMOS FET, 140W, 28V, 1880 – 1920MHz, 2010 – 2025MHz Asymmetric and dual-path design make it ideal for Doherty amplifier designs99051+$738.561510+$712.647150+$709.4078100+$706.1685150+$700.9856250+$696.4506500+$691.91551000+$686.7327 -
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Category: transistorDescription: MOSFET And IGBT drivers, NXP Semiconductors # # MOSFET and IGBT drivers, NXP Semiconductors377110+$0.734450+$0.6963100+$0.6691300+$0.6528500+$0.63651000+$0.62022500+$0.59575000+$0.5902 -
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Category: transistorDescription: Trans RF BJT NPN 12V 0.1A 3Pin Ultra Super Mini-Mold T/R493410+$0.980150+$0.9293100+$0.8930300+$0.8712500+$0.84941000+$0.82762500+$0.79505000+$0.7877 -
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Category: transistorDescription: Trans RF MOSFET N-CH 40V 3Pin TO-270 T/R72701+$88.045210+$84.2171100+$83.5281250+$82.9921500+$82.15001000+$81.76712500+$81.23125000+$80.7719 -
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Category: transistorDescription: RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24 @ 98MHz, 50V, LDMOS, SOT182571331+$1368.107410+$1355.670125+$1349.451450+$1343.2327100+$1337.0141150+$1330.7954250+$1324.5767500+$1318.3580 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) VHV6 600W NI1230S 50V4655
